Steady-State Response of Nonlinear Circuits Containing Parasitic Elements

We propose here a time-domain shooting algorithm for calculating the steady-state responses of nonlinear RF circuits containing parasitic elements that is based on both a modified Newton and a secant methods. Bipolar transistors and MOSFETs in ICs have small parasitic capacitors among their terminals. We can not neglect them because they will gives large effects to the shooting algorithm at the high frequency. Since our purpose is to develop a user friendly simulator, we mainly take into account the relatively large normal capacitors such as coupling and/or by-pass capacitors and so on, because the parasitic capacitors are usually smaller and contained in the device models. We have developed a very simple simulator only using the fundamental tools of SPICE, which can be applied to relatively large scale ICs, efficiently. key words: steady-state analysis, RF circuits, time-domain se-